GAAS CLEANING WITH A HYDROGEN RADICAL BEAM GUN IN AN ULTRAHIGH-VACUUM SYSTEM

被引：100

作者：

SUGATA, S ^{[1
]}

TAKAMORI, A ^{[1
]}

TAKADO, N ^{[1
]}

ASAKAWA, K ^{[1
]}

MIYAUCHI, E ^{[1
]}

HASHIMOTO, H ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1087 / 1091

页数：5

共 23 条

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[9] CHARACTERIZATION OF PHOTOCHEMICAL PROCESSING
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1445 - 1449
[10] AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY ON OZONE TREATED GAAS-SURFACES
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