SEMICONDUCTOR SURFACE AND CRYSTAL PHYSICS STUDIED BY MBE

被引：15

作者：

BACHRACH, RZ

机构：

[1] XEROX PARC, Palo Alto, CA 94304

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1979年 / 2卷 / 1-2期

关键词：

D O I：

10.1016/0146-3535(81)90027-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A review is presented of semiconductor surface and crystal physics studies carried out with the use of molecular beam epitaxial growth techniques. The studies reviewed are related to an understanding of the various aspects of the growth process. Examples are drawn from a variety of semiconductors, but special emphasis is given to GaAs related results. © 1981.

引用

页码：115 / 144

页数：30

共 75 条

[1] ABSTREITER G, 1978, APPLIED PHYSICS
[2] APPELBAUM JA, 1977, CHEM PHYSICS SOLID S, P275
[3] ADSORPTION OF ZN ON GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1973, 38 (02) : 394 - 412
[4] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[5] ARTHUR JR, 1976, CRC CRITICAL REV AUG, P416
[6] ARTHUR JR, 1967, J APPL PHYS, V38, P4024
[7] INTERFACE STATES AT GA-GAAS INTERFACE
BACHRACH, RZ
BIANCONI, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 525 - 528
[8] SURFACE RESONANCES AND OXIDATION OF SINGLE-CRYSTAL ALUMINUM
BACHRACH, RZ
FLODSTROM, SA
BAUER, RS
HASTROM, SBM
CHADI, DJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 488 - 493
[9] BACHRACH RZ, 1978, J VAC SCI TECH, V15
[10] BACHRACH RZ, UNPUBLISHED

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