AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY ON OZONE TREATED GAAS-SURFACES

被引：86

作者：

INGREY, S ^{[1
]}

LAU, WM ^{[1
]}

MCINTYRE, NS ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,FAC SCI,SURFACE SCI WESTERN,LONDON N6A 5B7,ONTARIO,CANADA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573770

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：984 / 988

页数：5

共 15 条

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[2] OXYGEN INTERACTION WITH GAAS-SURFACES - XPS-UPS STUDY
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[J]. SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) : 13 - 16
[4] HUBER AM, 1985, 1984 P GAAS REL COMP, P223
[5] CHEMICAL-STATE DEPTH PROFILE FOR GAAS SURFACE
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OKI, K
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01): : L15 - L17
[6] THE OXIDATION OF GAAS(110) - A REEVALUATION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 351 - 358
[7] OXIDATION OF GAAS(110) - NEW RESULTS AND MODELS
LANDGREN, G
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MORAR, JF
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HIMPSEL, FJ
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4839 - 4841
[8] SUBSTRATE CHEMICAL ETCHING PRIOR TO MOLECULAR-BEAM EPITAXY - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) SURFACES ETCHED BY THE H2SO4-H2O2-H2O SOLUTION
MASSIES, J
CONTOUR, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 806 - 810
[9] ESCA STUDIES OF GA, AS, GAAS, GA2O3, AS2O3 AND AS2O5
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NAKAMURA, S
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1978, 14 (02) : 129 - 141
[10] FACTORS AFFECTING THE GROWTH OF AN INTEGRATED GA1-XINXAS INP PIN-FET BY MOLECULAR-BEAM EPITAXY
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ANDREWS, DA
DAVIES, GJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 816 - 819

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