CHEMICAL-STATE DEPTH PROFILE FOR GAAS SURFACE

被引：15

作者：

KOHIKI, S ^{[1
]}

OKI, K ^{[1
]}

OHMURA, T ^{[1
]}

TSUJII, H ^{[1
]}

ONUMA, T ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,CENT RES LAB,MORIGUCHI,OSAKA 570,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 01期

关键词：

D O I：

10.1143/JJAP.23.L15

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L15 / L17

页数：3

共 10 条

[1] CONCENTRATION PROFILES FOR IRREGULAR SURFACES FROM X-RAY PHOTOELECTRON ANGULAR-DISTRIBUTIONS [J].

BAIRD, RJ ;

FADLEY, CS ;

KAWAMOTO, SK ;

MEHTA, M ;

ALVAREZ, R ;

SILVA, JA .

ANALYTICAL CHEMISTRY, 1976, 48 (06) :843-846

[2]

FADLEY CS, 1978, PROGR SOLID STATE CH, V11, P99

[3]

FADLEY CS, 1978, ELECT SPECTROSCOPY T, V2, P124

[4] ULTRASOFT-X-RAY REFLECTION, REFRACTION, AND PRODUCTION OF PHOTOELECTRONS (100-1000-EV REGION) [J].

HENKE, BL .

PHYSICAL REVIEW A, 1972, 6 (01) :94-&

[5] LIMITATIONS OF ION ETCHING FOR INTERFACE ANALYSIS [J].

HOLLOWAY, PH ;

BHATTACHARYA, RS .

SURFACE AND INTERFACE ANALYSIS, 1981, 3 (03) :118-125

[6] QUANTITATIVE CHEMICAL-ANALYSIS BY ESCA [J].

PENN, DR .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 9 (01) :29-40

[7] NEW DEPTH-PROFILING METHOD BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

PIJOLAT, M ;

HOLLINGER, G .

SURFACE SCIENCE, 1981, 105 (01) :114-128

[8] SURFACE AND INTERFACE STATES ON GAAS(110) - EFFECTS OF ATOMIC AND ELECTRONIC REARRANGEMENTS) [J].

SPICER, WE ;

PIANETTA, P ;

LINDAU, I ;

CHYE, PW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :885-893

[9] GAAS OXIDATION AND THE GA-AS-O EQUILIBRIUM PHASE-DIAGRAM [J].

THURMOND, CD ;

SCHWARTZ, GP ;

KAMMLOTT, GW ;

SCHWARTZ, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1366-1371

[10]

1983, VGS 1000 ESCA OPERAT

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