SURFACE AND INTERFACE STATES ON GAAS(110) - EFFECTS OF ATOMIC AND ELECTRONIC REARRANGEMENTS)

被引：112

作者：

SPICER, WE ^{[1
]}

PIANETTA, P ^{[1
]}

LINDAU, I ^{[1
]}

CHYE, PW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.569323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：885 / 893

页数：9

共 38 条

[1]

CALANDRA C, TO BE PUBLISHED

[2] RELAXATION EFFECTS ON (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (10) :4724-4726

[3] PHOTOEMISSION STUDIES OF SURFACE-STATES AND SCHOTTKY-BARRIER FORMATION ON INP [J].

CHYE, PW ;

BABALOLA, IA ;

SUKEGAWA, T ;

SPICER, WE .

PHYSICAL REVIEW B, 1976, 13 (10) :4439-4446

[4]

CHYE PW, 1977, J VAC SCI TECHNOL, V14, P885

[5] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J].

DINAN, JH ;

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1971, 26 (02) :587-&

[6] ATOMIC GEOMETRY OF CLEAVAGE SURFACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS [J].

DUKE, CB ;

LUBINSKY, AR ;

LEE, BW ;

MARK, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :761-768

[7] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605

[8]

Freeouf J. L., 1975, Critical Reviews in Solid State Sciences, V5, P245, DOI 10.1080/10408437508243482

[9] TEMPERATURE-DEPENDENCE AND ILLUMINATION-DEPENDENCE OF WORK FUNCTION OF GALLIUM-ARSENIDE [J].

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1972, 30 (01) :185-&

[10] STRUCTURE PROPERTY RELATIONSHIPS - KEY TO SOLID-STATE SCIENCE AND TECHNOLOGY [J].

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :C287-C300

← 1 2 3 4 →