A MULTILAYER MODEL FOR GAAS OXIDES FORMED AT ROOM-TEMPERATURE IN AIR AS DEDUCED FROM AN XPS ANALYSIS

被引:29
作者
DEMANET, CM
MARAIS, MA
机构
关键词
D O I
10.1002/sia.740070104
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:13 / 16
页数:4
相关论文
共 12 条
[1]   RELAXATION DURING PHOTOEMISSION AND LMM AUGER DECAY IN ARSENIC AND SOME OF ITS COMPOUNDS [J].
BAHL, MK ;
WOODALL, RO ;
WATSON, RL ;
IRGOLIC, KJ .
JOURNAL OF CHEMICAL PHYSICS, 1976, 64 (03) :1210-1218
[2]   APPLICATION OF FOURIER-TRANSFORM TECHNIQUES TO PROBLEM OF DECONVOLUTION IN PHOTOELECTRON-SPECTROSCOPY [J].
BEATHAM, N ;
ORCHARD, AF .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 9 (02) :129-148
[3]   APPLICATION OF DECONVOLUTION METHODS IN ELECTRON-SPECTROSCOPY - REVIEW [J].
CARLEY, AF ;
JOYNER, RW .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1979, 16 (1-2) :1-23
[4]  
GRANT H, 1981, SURF SCI, V105, P217
[5]   LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J].
GRUNTHANER, FJ ;
GRUNTHANER, PJ ;
VASQUEZ, RP ;
LEWIS, BF ;
MASERJIAN, J ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1443-1453
[6]   CHEMICAL DEPTH PROFILES OF THE GAAS-NATIVE OXIDE INTERFACE [J].
GRUNTHANER, PJ ;
VASQUEZ, RP ;
GRUNTHANER, FJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1045-1051
[7]   X-RAY PHOTOEMISSION STUDY OF OXIDATION PROCESS AT CLEAVED (110) SURFACES OF GAAS, GAP AND INSB [J].
IWASAKI, H ;
MIZOKAWA, Y ;
NISHITANI, R ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :1925-1933
[8]   A CHEMICAL BONDING MODEL FOR THE NATIVE OXIDES OF THE III-V COMPOUND SEMICONDUCTORS [J].
LUCOVSKY, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :456-462
[10]   X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF NATIVE OXIDES ON GAAS [J].
SCHWARTZ, GP ;
GUALTIERI, GJ ;
KAMMLOTT, GW ;
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) :1737-1749