SUBSTRATE CHEMICAL ETCHING PRIOR TO MOLECULAR-BEAM EPITAXY - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) SURFACES ETCHED BY THE H2SO4-H2O2-H2O SOLUTION

被引：137

作者：

MASSIES, J

CONTOUR, JP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：806 / 810

页数：5

共 28 条

[1] ADSORPTION AND DESORPTION OF O2 ON GAAS [111] SURFACES [J].

ARTHUR, JR .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) :4023-+

[2]

BARBARAY B, 1977, ANALUSIS, V5, P413

[3] XPS STUDY OF CHEMICALLY ETCHED GAAS AND INP [J].

BERTRAND, PA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01) :28-33

[4]

Carlson T. A., 1972, Journal of Electron Spectroscopy and Related Phenomena, V1, P161, DOI 10.1016/0368-2048(72)80029-X

[5] EXPERIMENTAL EVALUATION OF A SIMPLE MODEL FOR QUANTITATIVE-ANALYSIS IN X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

CARTER, WJ ;

SCHWEITZER, GK ;

CARLSON, TA .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :827-835

[6]

CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[7]

Cho A. Y., 1976, U.S. patent, Patent No. [3,969,164, 3969164]

[8] INFLUENCE OF GROWTH-CONDITIONS ON THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC ;

RADICE, C ;

FOY, PW .

ELECTRONICS LETTERS, 1980, 16 (02) :72-74

[9] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].

CHO, AY .

THIN SOLID FILMS, 1983, 100 (04) :291-317

[10]

CONTOUR JP, 1975, J ELECTRON SPECTROSC, V7, P175

← 1 2 3 →