FACTORS AFFECTING THE GROWTH OF AN INTEGRATED GA1-XINXAS INP PIN-FET BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

SCOTT, EG

WAKE, D

LIVINGSTONE, AW

ANDREWS, DA

DAVIES, GJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.583109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：816 / 819

页数：4

共 13 条

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[3]

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[6] THE EFFECT OF AS-4 OVERPRESSURE ON THE INCORPORATION OF IN INTO AL1-XINXAS GROWN ON (100) INP BY MOLECULAR-BEAM EPITAXY [J].

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[7] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[8]

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[9] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINAS USING TRIMETHYLINDIUM [J].

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[10] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].

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