INSITU CHEMICAL ETCHING OF GAAS(001) AND INP(001) SUBSTRATES BY GASEOUS HCL PRIOR TO MOLECULAR-BEAM EPITAXY GROWTH

被引：23

作者：

CONTOUR, JP

MASSIES, J

SALETES, A

OUTREQUIN, M

SIMONDET, F

ROCHETTE, JF

机构：

[1] ISA RIBER,F-92503 RUEIL MALMAISON,FRANCE

[2] PICOGIGA ZA COURTABOEUF,F-91940 LES ULIS,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：730 / 733

页数：4

共 18 条

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