ON THE ORIGIN OF OVAL DEFECT WITH NUCLEUS ON EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

NISHIKAWA, Y

KANAMOTO, K

TOKUDA, Y

FUJIWARA, K

NAKAYAMA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 06期

关键词：

D O I：

10.1143/JJAP.25.908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：908 / 909

页数：2

共 9 条

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[2] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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CHOW, R .

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[3] EFFECTS OF SUBSTRATE PREPARATION CONDITIONS ON GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1986, 48 (11) :701-703

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[5] THE MBE GROWTH OF GAAS FREE OF OVAL DEFECTS [J].

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[6] SURFACE-DEFECTS ON MBE-GROWN GAAS [J].

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OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02) :164-167

[7] SURFACE DEFECT FORMATION IN GAAS-LAYERS GROWN ON INTENTIONALLY CONTAMINATED SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L498-L500

[8] PARTICULATES - AN ORIGIN OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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BANDY, SG .

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[9] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS [J].

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JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :299-303

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