EFFECTS OF SUBSTRATE PREPARATION CONDITIONS ON GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

FUJIWARA, K

NISHIKAWA, Y

TOKUDA, Y

NAKAYAMA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 11期

关键词：

D O I：

10.1063/1.96748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：701 / 703

页数：3

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[1] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS
BAFLEUR, M
MUNOZYAGUE, A
ROCHER, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 531 - 538
[2] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
CHAI, YG
CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798
[3] AN INVESTIGATION OF GAAS FILMS GROWN BY MBE AT LOW SUBSTRATE TEMPERATURES AND GROWTH-RATES
METZE, GM
CALAWA, AR
MAVROIDES, JG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 166 - 169
[4] SURFACE-DEFECTS ON MBE-GROWN GAAS
SUZUKI, Y
SEKI, M
HORIKOSHI, Y
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 164 - 167
[5] ELIMINATION OF OVAL DEFECTS IN EPILAYERS BY USING CHEMICAL BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1086 - 1088
[6] PARTICULATES - AN ORIGIN OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY
WENG, SL
WEBB, C
CHAI, YG
BANDY, SG
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 391 - 393
[7] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS
WOOD, CEC
RATHBUN, L
OHNO, H
DESIMONE, D
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 299 - 303