PARTICULATES - AN ORIGIN OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY

被引：35

作者：

WENG, SL

WEBB, C

CHAI, YG

BANDY, SG

机构：

来源：

关键词：

D O I：

10.1063/1.96177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：391 / 393

页数：3

共 6 条

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[2] CALAWA AR, UNPUB
[3] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798
[4] THE MBE GROWTH OF GAAS FREE OF OVAL DEFECTS
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FREEOUF, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 241 - 242
[5] SURFACE-DEFECTS ON MBE-GROWN GAAS
SUZUKI, Y
SEKI, M
HORIKOSHI, Y
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 164 - 167
[6] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS
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RATHBUN, L
OHNO, H
DESIMONE, D
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 299 - 303