PARTICULATES - AN ORIGIN OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY

被引:35
作者
WENG, SL
WEBB, C
CHAI, YG
BANDY, SG
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D O I
10.1063/1.96177
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O59 [应用物理学];
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页码:391 / 393
页数:3
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