CHARACTERIZATION OF PHOTOCHEMICAL PROCESSING

[1] INVESTIGATION OF ANODICALLY GROWN FILMS ON GAAS USING X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 454 - 461

[2] XPS AND UPS STUDIES OF INTERACTION OF NITROGEN-CONTAINING MOLECULES WITH NICKEL - USE OF BINDING-ENERGY PATTERNS AND RELATIVE INTENSITIES TO DIAGNOSE SURFACE SPECIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 301 - 309

[3] LASER-INDUCED GAS-SURFACE INTERACTIONS [J]. SURFACE SCIENCE REPORTS, 1983, 3 (01) : 1 - 105

[4] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[5] EHRLICH DJ, 1983, VLSI ELECTRONICS MIC, V7, P129

[6] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[7] NAKAYAMA S, 1980, 2ND P S DRY PROC TOK, P115

[8] CHEMISORPTION AND OXIDATION STUDIES OF (110) SURFACES OF GAAS, GASB, AND INP [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2792 - 2806

[9] X-RAY PHOTOELECTRON-SPECTROSCOPY OF SIO2-SI INTERFACIAL REGIONS - ULTRATHIN OXIDE-FILMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) : 294 - 303

[10] YOKOYAMA S, 1984, 16TH C SOL STAT DEV, P451

[1] INVESTIGATION OF ANODICALLY GROWN FILMS ON GAAS USING X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 454 - 461

[2] XPS AND UPS STUDIES OF INTERACTION OF NITROGEN-CONTAINING MOLECULES WITH NICKEL - USE OF BINDING-ENERGY PATTERNS AND RELATIVE INTENSITIES TO DIAGNOSE SURFACE SPECIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 301 - 309

[3] LASER-INDUCED GAS-SURFACE INTERACTIONS [J]. SURFACE SCIENCE REPORTS, 1983, 3 (01) : 1 - 105

[4] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[5] EHRLICH DJ, 1983, VLSI ELECTRONICS MIC, V7, P129

[6] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[7] NAKAYAMA S, 1980, 2ND P S DRY PROC TOK, P115

[8] CHEMISORPTION AND OXIDATION STUDIES OF (110) SURFACES OF GAAS, GASB, AND INP [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2792 - 2806

[9] X-RAY PHOTOELECTRON-SPECTROSCOPY OF SIO2-SI INTERFACIAL REGIONS - ULTRATHIN OXIDE-FILMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) : 294 - 303

[10] YOKOYAMA S, 1984, 16TH C SOL STAT DEV, P451