Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures

被引：50

作者：

Harrell, RH ^{[1
]}

Pyshkin, KS ^{[1
]}

Simmons, MY ^{[1
]}

Ritchie, DA ^{[1
]}

Ford, CJB ^{[1
]}

Jones, GAC ^{[1
]}

Pepper, M ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期

关键词：

D O I：

10.1063/1.123840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a technique for the fabrication of high-mobility electron gases formed in undoped GaAs/AlGaAs heterostructures. The use of an insulated gate allows independent control over the carrier density in the Hall bar and ohmic contact regions of the device. This unique design eliminates difficulties in obtaining reliable ohmic contacts, particularly in the low carrier density regime. In the absence of remote ionized impurity scattering, extremely high transport mobilities are obtained at low carrier densities (1 x 10(6) cm(2) V-1 s(-1) at 1 x 10(10) cm(-2)). This design has been adapted to the formation of undoped one-dimensional electron gases that show clean and reproducible conductance plateau at 1.5 K. (C) 1999 American Institute of Physics. [S0003-6951(99)2216-0].

引用

页码：2328 / 2330

页数：3

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