BACK-GATED SPLIT-GATE TRANSISTOR - A ONE-DIMENSIONAL BALLISTIC CHANNEL WITH VARIABLE FERMI ENERGY

被引：32

作者：

HAMILTON, AR ^{[1
]}

FROST, JEF ^{[1
]}

SMITH, CG ^{[1
]}

KELLY, MJ ^{[1
]}

LINFIELD, EH ^{[1
]}

FORD, CJB ^{[1
]}

RITCHIE, DA ^{[1
]}

JONES, GAC ^{[1
]}

PEPPER, M ^{[1
]}

HASKO, DG ^{[1
]}

AHMED, H ^{[1
]}

机构：

[1] GEC MARCONI LTD, HIRST RES CTR, WEMBLEY HA9 7PP, MIDDX, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 22期

关键词：

D O I：

10.1063/1.106849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the quantized conductance of a one-dimensional ballistic channel in the two-dimensional electron gas of a back-gated GaAs/AlGaAs heterostructure. A standard Schottky split-gate fabricated with electron-beam lithography techniques is used to define the one-dimensional channel, but we incorporate an epitaxially grown in situ back-gate, situated approximately 1-mu-m below the electron gas, to provide additional control of the carrier density. Quantized conductance steps can be induced by changing the bias on either gate, highlighting the self-consistent nature of the electrostatics involved. We show that we can, in principle, achieve independent control of the one-dimensional carrier density and channel width.

引用

页码：2782 / 2784

页数：3

共 21 条

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