Electronic structure of HgSe(001) investigated by direct and inverse photoemission

被引：11

作者：

Eich, D ^{[1
]}

Hübner, D ^{[1
]}

Fink, R ^{[1
]}

Umbach, E ^{[1
]}

Ortner, K ^{[1
]}

Becker, CR ^{[1
]}

Landwehr, G ^{[1
]}

Fleszar, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.61.12666

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stimulated by recent photoemission results which suggest a positive fundamental energy gap in HgSe, we have investigated the electronic structure of molecular beam epitaxially grown HgSe(001) c(2 x 2) layers by a combination of direct ultraviolet photoemission spectroscopy (UPS) and inverse (IPES) photoelectron spectroscopy. Our UPS results do not support the finding of additional peaks above the valence band maximum (VBM) of Gawlik et al. [Phys. Rev. Lett. 78, 3165 (1997)]. A comparison of angle-integrated UPS and IPES spectra and nb initio calculated density of states of HgSe and HgTe demonstrates dissimilar behavior of the two compounds in the dispersion of the conduction bands between 0 and 2 eV above the VBM. Our results are compatible with the common view that HgSe is a semimetal.

引用

页码：12666 / 12669

页数：4

共 20 条

[1] LOW-ENERGY ELECTRON-GUN FOR ISOCHROMAT INVERSE PHOTOEMISSION [J].

CICCACCI, F ;

VESCOVO, E ;

DEROSSI, S ;

TOSCA, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 53 (02) :218-222

[2] Comment on "HgSe: Metal or semiconductor?" [J].

Dietl, T ;

Dobrowolski, W ;

Kossut, J ;

Kowalski, BJ ;

Szuszkiewicz, W ;

Wilamowski, Z ;

Witowski, AM .

PHYSICAL REVIEW LETTERS, 1998, 81 (07) :1535-1535

[3] VUV ISOCHROMAT SPECTROSCOPY [J].

DOSE, V .

APPLIED PHYSICS, 1977, 14 (01) :117-118

[4]

Eich D, 1999, PHYS STATUS SOLIDI A, V173, P261, DOI 10.1002/(SICI)1521-396X(199905)173:1<261::AID-PSSA261>3.0.CO

[5]

2-#

[6] OPTICAL-PROPERTIES OF HGSE [J].

EINFELDT, S ;

GOSCHENHOFER, F ;

BECKER, CR ;

LANDWEHR, G .

PHYSICAL REVIEW B, 1995, 51 (08) :4915-4925

[7]

FLESZAR A, UNPUB

[8] HgSe: Metal or semiconductor? [J].

Gawlik, KU ;

Kipp, L ;

Skibowski, M ;

Orlowski, N ;

Manzke, R .

PHYSICAL REVIEW LETTERS, 1997, 78 (16) :3165-3168

[9] Comment on "HgSe: Metal or semiconductor?" - Reply [J].

Gawlik, KU ;

Kipp, L ;

Skibowski, M ;

Orlowski, N ;

Manzke, R .

PHYSICAL REVIEW LETTERS, 1998, 81 (07) :1536-1536

[10]

GOLDMANN A, 1989, LANDOLDTBORNSTEIN NU, V23

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