Electronic structure of HgSe(001) investigated by direct and inverse photoemission

被引:11
作者
Eich, D [1 ]
Hübner, D [1 ]
Fink, R [1 ]
Umbach, E [1 ]
Ortner, K [1 ]
Becker, CR [1 ]
Landwehr, G [1 ]
Fleszar, A [1 ]
机构
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
关键词
D O I
10.1103/PhysRevB.61.12666
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Stimulated by recent photoemission results which suggest a positive fundamental energy gap in HgSe, we have investigated the electronic structure of molecular beam epitaxially grown HgSe(001) c(2 x 2) layers by a combination of direct ultraviolet photoemission spectroscopy (UPS) and inverse (IPES) photoelectron spectroscopy. Our UPS results do not support the finding of additional peaks above the valence band maximum (VBM) of Gawlik et al. [Phys. Rev. Lett. 78, 3165 (1997)]. A comparison of angle-integrated UPS and IPES spectra and nb initio calculated density of states of HgSe and HgTe demonstrates dissimilar behavior of the two compounds in the dispersion of the conduction bands between 0 and 2 eV above the VBM. Our results are compatible with the common view that HgSe is a semimetal.
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页码:12666 / 12669
页数:4
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