HgSe: Metal or semiconductor?

被引：63

作者：

Gawlik, KU

Kipp, L

Skibowski, M

Orlowski, N

Manzke, R

机构：

[1] CHRISTIAN ALBRECHTS UNIV KIEL,INST PHYS EXPT,D-24098 KIEL,GERMANY

[2] HUMBOLDT UNIV BERLIN,INST PHYS,D-10115 BERLIN,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.78.3165

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

From magnetotransport measurements it is generally believed that Hg-VI compounds show zero gap semiconducting behavior. Applying combined angle-resolved photoemission and inverse photoemission spectroscopy on HgSe(001) c(2 x 2), we observe a positive fundamental gap of about 0.42 eV and a surface related state close to the Fermi level above the conduction band minimum. Following the results of this direct determination of the (k) over bar-resolved band structure, previous experiments favoring zero gap models of Hg-VI compounds need to be reinterpreted.

引用

页码：3165 / 3168

页数：4

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