Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy

被引：94

作者：

Ding, XM ^{[1
]}

Hung, LM

Cheng, LF

Deng, ZB

Hou, XY

Lee, CS

Lee, ST

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

[3] Fudan Univ, Natl Key Lab, Surface Phys Lab, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 19期

关键词：

D O I：

10.1063/1.126449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet photoelectron spectroscopy has been applied to the investigation of modified hole injection barriers in organic light-emitting devices (OLEDs). Different from those reported previously, the indium tin oxide (ITO) surface treated in situ by oxygen plasma possesses a work function of 5.2 eV, and the organic ITO interface thereafter formed shows a 0.5 eV smaller hole injection barrier compared to that on untreated ITO. Insertion of an ultrathin SiO2 layer between the organic and ITO results in a similar reduction of the barrier. This indicates that improved hole injection favors efficient operation of OLEDs, as manifested by enhanced efficiency by the SiO2 insertion. (C) 2000 American Institute of Physics. [S0003-6951(00)02219-1].

引用

页码：2704 / 2706

页数：3

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