Nanoindentation creep of plasma-enhanced chemical vapor deposited silicon oxide thin films

被引：38

作者：

Cao, Zhiqiang ^{[1
]}

Zhang, Xin ^{[1
]}

机构：

[1] Boston Univ, Dept Mfg Engn, Brookline, MA 02446 USA

来源：

SCRIPTA MATERIALIA | 2007年 / 56卷 / 03期

关键词：

PECVD SiOx; nanoindentation; creep test; shear bands;

D O I：

10.1016/j.scriptamat.2006.09.022

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The time-dependent plastic properties of both as-deposited and annealed plasma-enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) thin films were probed by nanoindentation creep tests at room temperature. Our experiments found a strong size effect in the creep responses of the as-deposited PECVD SiOx thin films, which was much reduced after annealing. Based on the experimental results, the deformation mechanism is depicted by the "shear transformation zone" (STZ) based amorphous plasticity theories. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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收藏

页码：249 / 252

页数：4

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