Photoluminescence study of Cu diffusion and electromigration in CdTe

被引：80

作者：

Grecu, D ^{[1
]}

Compaan, AD ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys, Toledo, OH 43606 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 03期

关键词：

D O I：

10.1063/1.124375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report changes in the photoluminescence (PL) spectra associated with the diffusion of Cu in CdTe thin films used in CdTe/CdS solar cells. We studied films grown by vapor transport deposition and radio-frequency sputtering as well as single-crystal CdTe. The main effects of Cu diffusion appear to be the quenching of a donor-acceptor transition associated with Cd vacancies and the increase in intensity of a lower energy band due to deep acceptor states. The changes in junction PL are consistent with the movement of Cu+ ions in the electric fields near the CdS/CdTe junction. (C) 1999 American Institute of Physics. [S0003-6951(99)01329-7].

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页码：361 / 363

页数：3

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