Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors with amorphous semiconductor layer

被引:40
作者
Celle, Caroline [1 ]
Suspene, Clement [1 ]
Simonato, Jean-Pierre [1 ]
Lenfant, Stephane [2 ]
Ternisien, Marc [2 ]
Vuillaume, Dominique [2 ]
机构
[1] LITEN DTNM LCH, CEA Grenoble, F-38054 Grenoble 9, France
[2] CNRS, Inst Elect Microelect & Nanotechnol, Mol Nanostruct & Devices Grp, F-59652 Villeneuve Dascq, France
关键词
Organic thin film transistor; Self-assembled monolayers; Threshold voltage; Electrodes; Amorphous organic semiconductor; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; GATE INSULATOR; INTERFACIAL ROUGHNESS; FLEXIBLE ELECTRONICS; CHARGE-TRANSPORT; HIGH-MOBILITY; INJECTION; OXIDATION; SILICON;
D O I
10.1016/j.orgel.2008.10.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we show that thiolated self-assembled monolayers (SAMs) can be used to anchor source-drain gold electrodes on the substrate, leading to excellent electrical performances of the organic field-effect transistor (OFET) on a par with those using a standard electrode process. Using an amorphous semiconductor and a gate dielectric functionalized with SAMs bearing different dipole moments, we demonstrate that we can tune the threshold voltage alone, while keeping nearly unchanged the other electrical properties (hole carrier mobility, I-on/I-off ratio, subthreshold swing). This differs from previous studies for which SAMs functionalization induced significant changes in all the OFET electrical performances. This result opens doors to design organic circuits using reproducible amorphous semiconductor based OFETs for which only the threshold voltage can be tuned on demand. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:119 / 126
页数:8
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