Fabrication and characterization of novel lateral surface superlattice structure utilizing Schottky barrier height control by doped silicon interface control layers

A novel lateral surface superlattice (LSSL) structure based on the Schottky barrier height (SBH) difference produced by periodic insertion of Si interface control layer (Si ICL) stripes is proposed, fabricated and characterized. Two-dimensional computer simulation was first performed to gain information on basic design considerations. An electron-beam-induced current (EBIC) study on the fabricated device directly confirmed SBH modulation by Si ICL stripes. The devices showed periodic oscillations of drain conductance and transconductance at low temperatures up to 10 K. This behavior is distinctly different from that of previous split-gate devices. The mechanism of these oscillations was explained by a sequential resonant tunneling model. According to a quantitative analysis of the data, SBH difference of 70-150 meV was produced at the metal-semiconductor interface, which produced quantized levels with a separation of 2-3 meV at the heterointerface.