FABRICATION OF LATERAL SUPERLATTICES USING MULTILAYER RESIST TECHNIQUES

被引：2

作者：

CHANG, H ^{[1
]}

NUMMILA, K ^{[1
]}

GRUNDBACHER, R ^{[1
]}

ADESIDA, I ^{[1
]}

LEBURTON, JP ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.585984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A procedure utilizing multilayer resist systems has been developed for the fabrication of artificial lateral surface superlattices (LSSLs) and other structures involving multiple point contacts and split gates. Two electron beam exposures are performed with the first exposure properly adjusted to result in a development down to the surface of the bottom resist layer with suitable undercut profile in the top resist layers. Electron beam exposure of arbitrary geometries at high resolution is then performed on the bottom layer through the opening in the top layers. After metal lift-off, all these geometries are connected together via an airbridge network. The fabrication of field-effect devices with split gates and LSSL gates in GaAs/AlGaAs modulation-doped heterolayers are demonstrated. These devices exhibit quantum conductance at 1.8 K.

引用

页码：2900 / 2903

页数：4

共 9 条

[1]

ADESIDA I, 1990, MICROELECTRON ENG, V11, P60

[2] ELECTRON-BEAM FABRICATION OF GAAS LOW-NOISE MESFETS USING A NEW TRILAYER RESIST TECHNIQUE [J].