NEGATIVE TRANSCONDUCTANCE AND NEGATIVE DIFFERENTIAL RESISTANCE IN A GRID-GATE MODULATION-DOPED FIELD-EFFECT TRANSISTOR

被引：98

作者：

ISMAIL, K

CHU, W

YEN, A

ANTONIADIS, DA

SMITH, HI

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.100952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：460 / 462

页数：3

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