LATERAL-SURFACE-SUPERLATTICE AND QUASI-ONE-DIMENSIONAL GAAS/GAALAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS FABRICATED USING X-RAY AND DEEP-ULTRAVIOLET LITHOGRAPHY

被引：19

作者：

ISMAIL, K

CHU, W

ANTONIADIS, DA

SMITH, HI

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1824 / 1827

页数：4

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