FABRICATION AND CHARACTERIZATION OF DEEP MESA ETCHED ANTI-DOT SUPERLATTICES IN GAAS-ALGAAS HETEROSTRUCTURES

被引:37
作者
WEISS, D
GRAMBOW, P
VONKLITZING, K
MENSCHIG, A
WEIMANN, G
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
[2] UNIV STUTTGART,INST PHYS 4,W-7000 STUTTGART 80,GERMANY
[3] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY
关键词
D O I
10.1063/1.104708
中图分类号
O59 [应用物理学];
学科分类号
摘要
By etching a periodic array of holes through a high-mobility two-dimensional electron gas we define a lateral, "anti"-dot-type superlattice with periods a = 200 and a = 300 nm, much smaller than the electron mean free path in the unpatterned material. The devices are fabricated using electron beam lithography and reactive ion etching techniques, and characterized by magnetotransport experiments. Commensurability effects and the observed quenching of the Hall effect indicate that the electron gas between the etched holes essentially maintains its initial high electron mobility.
引用
收藏
页码:2960 / 2962
页数:3
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