Grain-boundary sliding in nanocrystalline fcc metals

被引：453

作者：

Van Swygenhoven, H ^{[1
]}

Derlet, PA ^{[1
]}

机构：

[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 22期

关键词：

D O I：

10.1103/PhysRevB.64.224105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molecular-dynamics computer simulations of a model Ni nanocrystalline sample with a mean grain size of 12 nm under uniaxial tension is reported. The microscopic view of grain-boundary sliding is addressed. Two atomic processes are distinguished in the interfaces during sliding: atomic shuffling and stress-assisted free-volume migration. The activated accommodation processes under high-stress and room-temperature conditions are grain-boundary and triple-junction migration, and dislocation activity.

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页数：9

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