Heterojunction photodiode fabricated from multiwalled carbon nanotube/ZnO nanowire/p-silicon composite structure

A heterojunction photodiode was fabricated from multiwalled carbon nanotubes (MWCNTs)/ZnO nanowires/p-Si (100) substrate composite structure. The heterojunction photodiode demonstrated a faster transient response and higher responsivity than the reference sample without deposition of MWCNTs, which is attributed to improved carrier collection and transport efficiency through the MWCNTs network. The high photoresponsivities of the devices are explained in terms of operation as a hybrid of photodiode and photoconductor modes. The spectral response of the devices showed dependence on voltage polarity and is attributed to the high valance band offset in the interfacial region of ZnO and p-Si substrate. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4776691]