Selenium vacancies and their effect on the fine structure of NbSe2 quasi-two-dimensional single crystals

被引:9
作者
Andreeva, O. N. [1 ]
Braude, I. S. [2 ]
Mamalui, A. A. [1 ]
机构
[1] Natl Tech Univ Kharkiv, Polytech Inst, UA-61002 Kharkov, Ukraine
[2] Natl Acad Sci Ukraine, Verkin Inst Low Temp Phys & Engn, UA-61103 Kharkov, Ukraine
关键词
quasi-two-dimensional crystals; X-ray diffraction analysis; vacancies; static displacements;
D O I
10.1134/S0031918X12090037
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Special features of the effect of a high-temperature annealing (443 K < T < 463 K) on the structure of NbSe2 single crystals are studied. On the basis of x-ray diffraction measurements, static displacements of atoms along and across layers of this structure are analyzed on the basis of the model developed by Krivoglaz [Fiz. Tv. Tela 81, no. 1(7), 277 (1981)]. The depth distribution of vacancies is nonuniform and depends greatly on the annealing temperature.
引用
收藏
页码:888 / 892
页数:5
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