Anisotropic resistivities of precisely oxygen controlled single-crystal Bi2Sr2CaCu2O8+delta: Systematic study on ''spin gap'' effect

被引：304

作者：

Watanabe, T ^{[1
]}

Fujii, T ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] SCI UNIV TOKYO, FAC SCI, DEPT APPL PHYS, SHINJUKU KU, TOKYO 162, JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.79.2113

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The in-plane resistivity rho(a)(T) and the out-of-plane resistivity rho(c)(T) have been systematically measured for Bi2Sr2CaCu2O8+delta Single crystals with their oxygen contents precisely controlled. In the underdoped region, deviation from T-linear in-plane resistivity, which evidences the opening of the ''spin gap,'' is clearly observed, while the out-of-plane resistivity is well reproduced by the activation-type phenomenological formula rho(c)(T)=(a/T)exp(Delta/T) + c. In contrast to the YBa2Cu3O7-delta system, we find that the onset of the semiconducting rho(c)(T) does not coincide with the opening of the spin gap seen in the rho(c)(T) in this Bi2Sr2CaCu2O8+delta system.

引用

页码：2113 / 2116

页数：4

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