Aluminum-doped n-type ZnSTe alloy grown by molecular beam epitaxy

被引:23
作者
Sou, IK
Yang, Z
Mao, J
Ma, ZH
Tong, KW
Yu, P
Wong, GKL
机构
[1] Department of Physics, Hong Kong Univ. of Sci. and Technol., Kowloon, Clear Water Bay
关键词
D O I
10.1063/1.117718
中图分类号
O59 [应用物理学];
学科分类号
摘要
Successful n-type doping of ZnSTe alloy using elemental aluminum source has been carried out by molecular beam epitaxy. Hall effect measurement (300-77 K) was performed on as-grown ZnS0.977Te0.023 epilayers with various dopant concentrations. Electron carrier concentration as high as 1.3X10(19) cm(-3) has been achieved. For carrier concentration higher than 5X10(18) cm(-3), the carrier concentration is independent of temperature, possibly indicating formation of a very shallow donor level. A group of ZnS1-xTex epilayers with different x values was doped using a constant aluminum beam flux for studying the dependence of the dopant activation on Te composition. Good activation of Al dopant was obtained for x value from 0 to a few percent, but it became poor for larger x value and finally Al became inactive for x values higher than 10%. Room temperature photoluminescence measurements on doped and undoped ZnS and ZnS1-xTex layers indicate that Al dopants from deep-level radiative centers in addition to a shallow donor level. The characteristics of these deep levels as a function of Te composition have also been studied. (C) 1996 American Institute of Physics.
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页码:2519 / 2521
页数:3
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