Hydrogen passivation in n- and p-type 6H-SiC

Hydrogen passivation effects are found to be much more prevalent in p-type 6H-SiC relative to n-type material. Reactivation of passivated B accepters occurs at similar to 700 degrees C, corresponding to a reactivation energy of similar to 3.3 eV. This is much higher than for passivated accepters in Si, where reactivation occurs at less than or equal to 200 degrees C. The incorporation depth of H-2 from a plasma at 200 degrees C is less than or equal to 0.1 mu m in 30 min, corresponding to a diffusivity approximately two orders of magnitude lower than in Si at the same temperature. The average energy of ions in the H-2 plasma has an influence on the peak concentration of incorporated deuterium and on its diffusion depth.