HYDROGEN PASSIVATION OF DONORS AND ACCEPTERS IN SIC

被引：46

作者：

GENDRON, F ^{[1
]}

PORTER, LM ^{[1
]}

PORTE, C ^{[1
]}

BRINGUIER, E ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.114388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrogen on donors (N) and accepters (Al, B) in 6H-SiC crystals has been evidenced by electron spin resonance and transport measurements. Typical passivation (i.e., complexing with H) levels of 75% have been obtained by annealing in a H-2 atmosphere, and a corresponding decrease in free-carrier density has been observed. (C) 1995 American Institute of Physics.

引用

页码：1253 / 1255

页数：3

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