AES and SRUPS studies on surface passivation of GaAs by (NH4)(2)S-x sulfurization techniques

被引：4

作者：

Hsieh, JT

Hwang, HL

机构：

[1] Department of Electrical Engineering, National Tsing Hua University

来源：

APPLIED SURFACE SCIENCE | 1996年 / 92卷 / 1-4期

关键词：

Ammonium compounds - Auger electron spectroscopy - Characterization - Electronic density of states - Photoelectron spectroscopy - Schottky barrier diodes - Semiconducting gallium arsenide - Surface structure - Surface treatment - Surfaces;

D O I：

10.1016/0169-4332(95)00234-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface passivation technique using (NH4)(2)S-x on GaAs(100) surface was investigated. With this surface treatment, the effective barrier heights for both Al-GaAs and Au-GaAs Schottky diodes were found to vary with the metal work functions, which is clear evidence of the lower surface state density. AES and SRUPS measurements were done to characterize the surfaces including their compositions. In this paper, interpretations on this novel passivation effect are also provided.

引用

页码：222 / 226

页数：5

共 5 条

[1] RELAXATION DURING PHOTOEMISSION AND LMM AUGER DECAY IN ARSENIC AND SOME OF ITS COMPOUNDS [J].