Photovoltaic performance of p-AgGa0.25In0.75Se2/n-CdS thin film heterojunctions

被引:5
作者
Chandra, GH [1 ]
Hussain, OM [1 ]
Uthanna, S [1 ]
Naidu, BS [1 ]
机构
[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India
关键词
solar cells; I-III-VI2; chalcopyrites; semiconductors; electrical properties and measurements; optical properties;
D O I
10.1016/S0167-577X(01)00479-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polycrystalline thin film p-AgGa0.25In0.75Se2/n-CdS heterojunctions were fabricated and current density-voltage, capacitance-voltage and spectral response of the junctions were studied. The heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 560 mV, a short-circuit current density of 22.5 mA cm(-2) and an electrical conversion efficiency of 6.3% have been obtained for a cell 1 cm(2) in area under a solar input of 100 mW cm(-2). (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:216 / 220
页数:5
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