Macroscopic simulation of quantum mechanical effects in 2-D MOS devices via the density gradient method

Here, for the first time, are presented results of two-dimensional (2-D) simulations of metal-oxide-semiconductor (MOS) devices, including quantum mechanical modeling throughout the entire device region, calculated using the density gradient method. The importance of quantum mechanical modeling of the entire device structure, including the gate, source, drain, and channel, is demonstrated through one-dimensional (I-D) examples and through analysis of double and single-gated fully-depleted silicon-on-insulator (SOI) devices. A comparison of density gradient results with literature data is also presented.