Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides

被引：13

作者：

Asenov, A ^{[1
]}

Kaya, S ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland

来源：

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2000年

关键词：

D O I：

10.1109/SISPAD.2000.871226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we use the Density Gradient (DG) simulation approach to study, in 3-D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2-D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the Quantum Mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples.

引用

页码：135 / 138

页数：4

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