Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

被引：94

作者：

Jallepalli, S ^{[1
]}

Bude, J ^{[1
]}

Shih, WK ^{[1
]}

Pinto, MR ^{[1
]}

Maziar, CM ^{[1
]}

Tasch, AF ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 02期

关键词：

D O I：

10.1109/16.557719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A first-principles approach to inversion layer quantization, valid for arbitrarily complex band structures, has been developed, This has allowed, for the first time, hole quantization and its effects on p-MOSFET device characteristics to be studied, In addition, electron quantization effects are revisited, improving on previous, simpler approaches, In particular, the impact of quantization on the threshold voltages and ''effective'' gate oxide thicknesses of p- and n-MOSFET's is investigated,A simple compact model is provided to quantitatively describe the threshold voltage shifts at 300 K as a function of the doping concentration and the oxide thickness, The significance of hole quantization for buried channel p-MOS structures is also studied, The results can be used to both identify and model these effects using popular device simulators.

引用

页码：297 / 303

页数：7

共 12 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].