SELF-CONSISTENT CALCULATION OF ELECTRON AND HOLE INVERSION CHARGES AT SILICON SILICON DIOXIDE INTERFACES

被引：158

作者：

MOGLESTUE, C

机构：

来源：

关键词：

D O I：

10.1063/1.336898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3175 / 3183

页数：9

共 11 条

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