TRANSCONDUCTANCE DEGRADATION IN THIN-OXIDE MOSFETS

被引：86

作者：

BACCARANI, G ^{[1
]}

WORDEMAN, MR ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 10期

关键词：

D O I：

10.1109/T-ED.1983.21290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1295 / 1304

页数：10

共 24 条

[1] INTERPRETATION OF C-V MEASUREMENTS FOR DETERMINING THE DOPING PROFILE IN SEMICONDUCTORS [J].

BACCARANI, G ;

RUDAN, M ;

SPADINI, G ;

MAES, H ;

VANDERVORST, W ;

VANOVERSTRAETEN, R .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :65-71

[2]

BACCARANI G, 1982, JUN DEV RES C FT COL

[3] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

WALKER, EJ ;

COOK, PW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :247-255

[5]

DENNARD RH, 1972, DEC IEDM

[6]

El-Mansy Y. A., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P16

[7] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI [J].

ELMANSY, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :567-573

[8] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].

FOWLER, AB ;

FANG, FF ;

HOWARD, WE ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (20) :901-&

[9] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J].

GAENSSLEN, FH ;

RIDEOUT, VL ;

WALKER, EJ ;

WALKER, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :218-229

[10] TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION MODE MOSFETS [J].

GAENSSLEN, FH ;

JAEGER, RC .

SOLID-STATE ELECTRONICS, 1979, 22 (04) :423-430

← 1 2 3 →