INTERPRETATION OF C-V MEASUREMENTS FOR DETERMINING THE DOPING PROFILE IN SEMICONDUCTORS

被引：31

作者：

BACCARANI, G

RUDAN, M

SPADINI, G

MAES, H

VANDERVORST, W

VANOVERSTRAETEN, R

机构：

[1] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY

[2] LAB ESAT,B-3030 HEVERLEE,BELGIUM

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 01期

关键词：

D O I：

10.1016/0038-1101(80)90169-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：65 / 71

页数：7

共 17 条

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