2S/mm transconductance InAs-inserted-channel modulation doped field effect transistors with a very close gate-to-channel separation of 14.5 nm

被引：7

作者：

Xu, D ^{[1
]}

Heiss, H ^{[1
]}

Sexl, M ^{[1
]}

Kraus, S ^{[1
]}

Bohm, G ^{[1
]}

Trankle, G ^{[1
]}

Weimann, G ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 4B期

关键词：

MODFET; InGaAs; InAlAs; InAs; transconductance;

D O I：

10.1143/JJAP.36.L470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have achieved a very small gate-to-channel separation d(gi) + Delta d of 14.5 nm for InAs-inserted-channel modulation doped field effect transistors (InAs-MODFETs) with the optimum control of wet-chemically recessed groove for gate electrodes. Excellent output characteristics as well as high channel current more than 1 A/mm can still be retained. The optimum wet-chemically fabricated deep recess groove leads to an absence of the influences of surface potential. Combining the Gamma-gate fabrication technique, d(gi) + Delta d = 14.5 nm produces a maximum extrinsic transconductance of 1.95 S/mm at a drain bias of 1.5 V. This is attributed to the very small gate-to-channel distance, the optimum gate fabrication technology, and the optimum channel design as well.

引用

页码：L470 / L472

页数：3