Controlling high-mobility conduction in SrTiO3 by oxide thin film deposition

被引：32

作者：

Herranz, G. ^{[1
,2
]}

Basletic, M. ^{[1
,3
]}

Copie, O. ^{[1
]}

Bibes, M. ^{[1
]}

Khodan, A. N. ^{[1
,4
]}

Carretero, C. ^{[1
]}

Tafra, E. ^{[3
]}

Jacquet, E. ^{[1
]}

Bouzehouane, K. ^{[1
]}

Hamzic, A. ^{[3
]}

Barthelemy, A. ^{[1
]}

机构：

[1] Univ Paris 11, Unite Mixte Phys, CNRS Thales Associee, F-91767 Palaiseau, France

[2] ICMAB CSIC, Inst Ciencia Mat Barcelona, Bellaterra, Catalonia, Spain

[3] Univ Zagreb, Fac Sci, Dept Phys, HR-10002 Zagreb, Croatia

[4] RAS, AN Frumkin Inst Phys Chem & Electrochem, Moscow 119991, Russia

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 01期

关键词：

carrier density; chemical analysis; doping; high-temperature effects; insulating thin films; oxygen; pulsed laser deposition; strontium compounds; vacancies (crystal); HETEROSTRUCTURES; CARBON;

D O I：

10.1063/1.3063026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrTiO3 becomes a high-mobility metallic conductor when doped with oxygen vacancies at low concentrations (>= 10(16) cm(-3)). We show that the vacancy concentration in the SrTiO3 single crystal substrates could be controllably tuned by changing the thickness of oxide films (deposited by pulsed laser deposition at high temperature and low oxygen pressure). The obtained variation in the carrier density strongly influences the transport properties. The quantitative analysis of the experimental results leads toward new and accurate strategies for the design of multifunctional oxide heterostructures for electronics and spintronics.

引用

页数：3

共 16 条

[1] SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J].