Tailoring of BST and MgO layers for phase shifter applications

被引:9
作者
Jain, M [1 ]
Majumder, SB
Katiyar, RS
Bhalla, AS
Miranda, FA
Van Keuls, FW
机构
[1] Univ Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA
[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[3] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
[4] Ohio Aerosp Inst, Cleveland, OH 44142 USA
关键词
BST; sol-gel; thin film; phase-shifter; microwave; heterostructure;
D O I
10.1080/10584580490441548
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sol-gel technique has been utilized to deposit heterostructured Ba0.5Sr0.5TiO3 :MgO (BST:MgO) films with different BST/MgO layer sequences and thicknesses in order to achieve enhanced microwave properties. The correlation between the structure, microstructure, and the dielectric properties are presented. Eight element coupled microstrip phase-shifters were fabricated on these films and the performance of these coupled microstrip phase-shifters at microwave frequencies was evaluated in the 15-17 GHz frequency range. The high frequency figure of merit (kappa), dramatically improved to 87degrees/dB in the optimized heterostructured composite thin film measured at 533 kV/cm, which is the highest known value measured in the Ku band region for BST based thin films. These results represent the current state of the art technology.
引用
收藏
页码:59 / 68
页数:10
相关论文
共 23 条
  • [1] Novel BST:MgTiO3 composites for frequency agile applications.
    Alberta, EF
    Guo, R
    Bhalla, AS
    [J]. FERROELECTRICS, 2002, 268 : 169 - 174
  • [2] BABBITT RW, 1992, MICROWAVE J, V35, P63
  • [3] Large dielectric constant (ε/ε0>6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters
    Carlson, CM
    Rivkin, TV
    Parilla, PA
    Perkins, JD
    Ginley, DS
    Kozyrev, AB
    Oshadchy, VN
    Pavlov, AS
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1920 - 1922
  • [4] MgO-mixed Ba0.6Sr0.4TiO3 bulk ceramics and thin films for tunable microwave applications
    Chang, WT
    Sengupta, L
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) : 3941 - 3946
  • [5] Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters
    Chen, CL
    Shen, J
    Chen, SY
    Luo, GP
    Chu, CW
    Miranda, FA
    Van Keuls, FW
    Jiang, JC
    Meletis, EI
    Chang, HY
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (05) : 652 - 654
  • [6] The influence of microstructure on the electronic properties of thin films of barium strontium titanium oxide composites
    Cole, MW
    Sengupta, S
    Stowell, S
    Hubbard, CW
    Ngo, EH
    [J]. INTEGRATED FERROELECTRICS, 1998, 21 (1-4) : 469 - 473
  • [7] Novel barium strontium titanate Ba0.5Sr0.5TiO3/MgO thin film composites for tunable microwave devices
    Jain, M
    Majumder, SB
    Katiyar, RS
    Bhalla, AS
    [J]. MATERIALS LETTERS, 2003, 57 (26-27) : 4232 - 4236
  • [8] Dielectric properties of sol-gel-derived MgO:Ba0.5Sr0.5TiO3 thin-film composites
    Jain, M
    Majumder, SB
    Katiyar, RS
    Agrawal, DC
    Bhalla, AS
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (17) : 3212 - 3214
  • [9] Mg-doped Ba0.6Sr0.4TiO3 thin films for tunable microwave applications
    Joshi, PC
    Cole, MW
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (02) : 289 - 291
  • [10] The effect of MgO and rare-earth oxide on formation behavior of core-shell structure in BaTiO3
    Kishi, H
    Okino, Y
    Honda, M
    Iguchi, Y
    Imaeda, M
    Takahashi, Y
    Ohsato, H
    Okuda, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B): : 5954 - 5957