MgO-mixed Ba0.6Sr0.4TiO3 bulk ceramics and thin films for tunable microwave applications

被引:203
作者
Chang, WT
Sengupta, L
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Paratek Microwave Inc, Columbia, MD 21045 USA
关键词
D O I
10.1063/1.1505669
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dielectric properties of Ba0.6Sr0.4TiO3 (BST) and 1.0, 20.0, 40.0, and 60.0 wt % MgO-mixed BST bulk ceramics and thin films were investigated for tunable microwave applications. The effects of MgO mixing with BST on BST phase transitions were examined. It is observed that Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. Mg-substituted BST and MgO-mixed phases exhibit depressed and broadened BST phase transition peaks, resulting in decreased dielectric constants and dielectric losses at room temperature. BST and 1.0, 20.0, 40.0, and 60.0 wt % MgO-mixed BST thin films (similar to0.3 mum thick) were deposited on (100) MgO single-crystal substrates at 750degreesC in an oxygen ambient pressure of 200 mTorr by pulsed laser deposition. The MgO-BST composite thin films showed a relatively high dielectric Q (=1/tan delta) compared to the pure BST and Mg-substituted BST thin films while retaining useful dielectric tuning. (C) 2002 American Institute of Physics.
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页码:3941 / 3946
页数:6
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