Do we really need ferroelectrics in paraelectric phase only in electrically controlled microwave devices?

被引:152
作者
Gevorgian, SS [1 ]
Kollberg, EL
机构
[1] Chalmers Univ Technol, Dept Microelect, S-41296 Gothenburg, Sweden
[2] Ericsson Microwave Syst, Microwave & High Speed Elect Res Ctr, S-43184 Molndal, Sweden
关键词
ferroelectries; paraelectrics; tunable microwave devices;
D O I
10.1109/22.963146
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Typical paraelectric materials (e.g., SrTiO3, KTaO3, BaxSr1-xTiO3, x < 0.5) and electrically tunable microwave devices based on these materials are briefly reviewed. The analysis shows that in spite of the recent year's extensive efforts, no considerable improvement in the microwave losses in thin paraelectric films has been achieved. Thin films, regardless of fabrication method and substrate type, have much lower dielectric permittivity than bulk single crystals, and the loss tangent at microwave frequencies (f > 10 GHz) is of the order of 0.01 (at zero de-bias field) at room temperature. Nevertheless, quite promising component and subsystem level devices are successfully demonstrated. Use of ceramic (bulk and thick film) ferroelectrics in tunable microwave devices, currently considered for industrial applications, offer cost reduction. In this paper, explicitly for the first time, we consider possibilities and benefits of using ferroelectrics in polar phase in electrically controllable microwave devices. Examples of using ferroelectrics in polar state (e.g., Na0.5K0.5NbO3, SrTiO3 in antiferroelectric. phase) in electrically tunable devices are reported.
引用
收藏
页码:2117 / 2124
页数:8
相关论文
共 49 条
[1]   DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies [J].
Abadei, S ;
Gevorgian, S ;
Cho, CR ;
Grishin, A ;
Andreasson, J ;
Lindbäck, T .
APPLIED PHYSICS LETTERS, 2001, 78 (13) :1900-1902
[2]  
BABBITT RW, 1992, MICROWAVE J, V35, P63
[3]   Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz [J].
Baniecki, JD ;
Laibowitz, RB ;
Shaw, TM ;
Duncombe, PR ;
Neumayer, DA ;
Kotecki, DE ;
Shen, H ;
Ma, QY .
APPLIED PHYSICS LETTERS, 1998, 72 (04) :498-500
[4]  
BETE K, 1970, MIKROWELLENVERHALTEN, V2
[5]   The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films [J].
Chang, WT ;
Horwitz, JS ;
Carter, AC ;
Pond, JM ;
Kirchoefer, SW ;
Gilmore, CM ;
Chrisey, DB .
APPLIED PHYSICS LETTERS, 1999, 74 (07) :1033-1035
[6]  
Cho CR, 1999, APPL PHYS LETT, V75, P268, DOI 10.1063/1.124344
[7]   Improved low frequency and microwave dielectric response in strontium titanate thin films grown by pulsed laser ablation [J].
Dalberth, MJ ;
Stauber, RE ;
Price, JC ;
Rogers, CT ;
Galt, D .
APPLIED PHYSICS LETTERS, 1998, 72 (04) :507-509
[8]  
DAS S, 1991, MICROWAVES RF SEP, P93
[9]   Planar microwave integrated phase-shifter design with high purity ferroelectric material [J].
DeFlaviis, F ;
Alexopoulos, NG ;
Stafsudd, OM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (06) :963-969
[10]   ELECTRICALLY TUNABLE COPLANAR TRANSMISSION-LINE RESONATORS USING YBA2CU3O7-X/SRTIO3 BILAYERS [J].
FINDIKOGLU, AT ;
JIA, QX ;
CAMPBELL, IH ;
WU, XD ;
REAGOR, D ;
MOMBOURQUETTE, CB ;
MCMURRY, D .
APPLIED PHYSICS LETTERS, 1995, 66 (26) :3674-3676