Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz

被引:135
作者
Baniecki, JD [1 ]
Laibowitz, RB
Shaw, TM
Duncombe, PR
Neumayer, DA
Kotecki, DE
Shen, H
Ma, QY
机构
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[2] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA
[3] IBM Corp, Div Microelect, Hopewell Junction, NY 12533 USA
[4] Siemens Components Inc, Hopewell Junction, NY 12533 USA
关键词
D O I
10.1063/1.120796
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dielectric relaxation of Ba0.7Sr0.3TiO3 thin films was investigated up to K band (20 GHz) using time domain and frequency domain measurements. Our results show that from 1 mHz to 20 GHz, the dielectric relaxation of the complex capacitance of Ba0.7Sr0.3TiO3 thin films can be understood in terms of a power law dependence known as the Curie-von Schweidler law. The small dispersion (less than 7% decrease in capacitance from 1 mHz to 20 GHz) and low loss (loss angle less than 0.006 at 20 GHz) measured in Ba0.7Sr0.3TiO3 thin films indicate that these films are applicable to device application up to at least K band. (C) 1998 American Institute of Physics.
引用
收藏
页码:498 / 500
页数:3
相关论文
共 14 条
  • [1] Ferroelectric phase shifters and their performance in microwave phased array antennas
    Babbitt, R
    Koscica, T
    Drach, W
    Didomenico, L
    [J]. INTEGRATED FERROELECTRICS, 1995, 8 (1-2) : 65 - 76
  • [2] BANIECKI JD, UNPUB
  • [3] CHIVUKULA V, 1995, INTEGR FERROELECTR, V10, P217
  • [4] Planar microwave integrated phase-shifter design with high purity ferroelectric material
    DeFlaviis, F
    Alexopoulos, NG
    Stafsudd, OM
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (06) : 963 - 969
  • [5] Origin of dielectric relaxation observed for Ba0.5Sr0.5TiO3 thin-film capacitor
    Fukuda, Y
    Numata, K
    Aoki, K
    Nishimura, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B): : 5178 - 5180
  • [6] DIELECTRIC-RELAXATION OF (BA,SR)TIO3 THIN-FILMS
    HORIKAWA, T
    MAKITA, T
    KUROIWA, T
    MIKAMI, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B): : 5478 - 5482
  • [7] MEASUREMENT OF HIGH-FREQUENCY DIELECTRIC CHARACTERISTICS IN THE MM-WAVE BAND FOR DIELECTRIC THIN-FILMS ON SEMICONDUCTOR SUBSTRATES
    IKUTA, K
    UMEDA, Y
    ISHII, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B): : L1211 - L1213
  • [8] High frequency electrical characterization of BST capacitors
    Jammy, R
    Wills, LA
    [J]. INTEGRATED FERROELECTRICS, 1997, 15 (1-4) : 235 - 243
  • [9] Jonscher A. K., 1983, Dielectric Relaxation in Solids
  • [10] A review of high dielectric materials for DRAM capacitors
    Kotecki, DE
    [J]. INTEGRATED FERROELECTRICS, 1997, 16 (1-4) : 1 - 19