Origin of dielectric relaxation observed for Ba0.5Sr0.5TiO3 thin-film capacitor

被引：71

作者：

Fukuda, Y

Numata, K

Aoki, K

Nishimura, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 9B期

关键词：

Ba1-xSrxTiO3; thin-film capacitor; dielectric relaxation; oxygen vacancy;

D O I：

10.1143/JJAP.35.5178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to identify the origin of dielectric relaxation of Pt/Ba1-xSrxTiO3/Pt thin-film capacitors, effects of post-annealing in oxygen ambient on their electrical properties were investigated. From comparison of the electrical properties of as-deposited and post-annealed capacitors, it is concluded that electrons from oxygen vacancies in the interfacial depletion region are the origin of the phenomenon.

引用

页码：5178 / 5180

页数：3

共 9 条

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