TEMPERATURE-DEPENDENCE OF DIELECTRIC ABSORPTION CURRENT OF SRTIO3 THIN-FILM CAPACITOR

被引:14
作者
FUKUDA, Y
AOKI, K
NUMATA, K
NISHIMURA, A
机构
[1] ULSI Technology Center, Texas Instruments Japan Ltd., Ibaraki, 300-04, 2350 Kihara, Miho-mura, Inashiki-gun
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 10A期
关键词
SRTIO3 THIN-FILM CAPACITOR; DIELECTRIC RELAXATION; DIELECTRIC ABSORPTION CURRENT; ORIGIN OF DIELECTRIC RELAXATION;
D O I
10.1143/JJAP.34.L1291
中图分类号
O59 [应用物理学];
学科分类号
摘要
Temperature dependence of dielectric absorption current of the Pt/SrTiO3/Au capacitor was investigated. The time dependence of the dielectric absorption currents obtained from I-t measurements for the time window between land 50 s can be fitted by a superposition of three Debye-type relaxations. Relaxation time constant and capacitance which characterize each relaxation species show different temperature dependences. Relaxation time constants are independent of temperature. On the other hand, relaxation capacitances obey Arrhenius' equation with the same activation energy of 0.18 eV. This low activation energy suggests that the observed dielectric absorption current is electronic. Possible mechanisms for the observed dielectric relaxation are discussed based on these results.
引用
收藏
页码:L1291 / L1292
页数:2
相关论文
共 4 条
[1]   CURRENT-VOLTAGE CHARACTERISTICS OF ELECTRON-CYCLOTRON-RESONANCE SPUTTER-DEPOSITED SRTIO3 THIN-FILMS [J].
FUKUDA, Y ;
AOKI, K ;
NUMATA, K ;
NISHIMURA, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5255-5258
[2]  
FUKUDA Y, 1995, 9TH P IEEE INT S APP, P79
[3]   BULK CONDUCTIVITY AND DEFECT CHEMISTRY OF ACCEPTOR-DOPED STRONTIUM-TITANATE IN THE QUENCHED STATE [J].
WASER, R .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (08) :1934-1940
[4]  
Waser R., 1995, NATO ASI SER, V284, P223