PULSED LASER DEPOSITION OF ORIENTED PBZR.54TI.46O3

We report the growth of oriented PhzrxTi1-xo3 (PZT) films, formed in situ by pulsed laser deposition onto heated substrates. The films were deposited from a pressed pellet of PbO - Zr02 - PbTio3 of composition PbZr 54Ti_4603 using a KrF excimer laser (248 nm, ~2 J/cm2, 5 hz). Typically, 300 to 1500-nm-thick films were deposited onto a heated substrate of <100> MgO or <100> SrTio3. The deposition temperature was varied from RT to 750°C in ambient oxygen pressures between 10-6 and 0.3 Torr. Films were analyzed for structure (XRD), composition and thickness (EBS), and surface morphology (SEM). For substrate temperatures up to at least 250°C, an amorphous film was deposited. Isochronal annealing of such a film produced crystallization only after heating for 1 h at 550°C. In contrast, crystalline films were deposited at temperatures as low as 350°C, although <100> oriented PZT required at least 550°C. Films deposited beyond 600°C, or in too low an oxygen pressure were Pb deficient. © 1991, Taylor & Francis Group, LLC. All rights reserved.